Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

Shuntaro Fujii, Shin Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 × 2 μm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.

Original languageEnglish
Pages (from-to)3046-3049
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • CLC
  • CW laser
  • Crystallization
  • Grain
  • Poly-Si
  • Strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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