Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 1991 Mar|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering