Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

T. Ozaki, A. Nitayama, T. Hamamoto, K. Sunouchi, F. Horiguchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.

Original languageEnglish
Pages (from-to)95-97
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number3
DOIs
Publication statusPublished - 1991 Mar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Ozaki, T., Nitayama, A., Hamamoto, T., Sunouchi, K., & Horiguchi, F. (1991). Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells. IEEE Electron Device Letters, 12(3), 95-97. https://doi.org/10.1109/55.75723