Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

T. Ozaki; A. Nitayama; T. Hamamoto; K. Sunouchi; F. Horiguchi

doi:10.1109/55.75723

Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

T. Ozaki, A. Nitayama, T. Hamamoto, K. Sunouchi, F. Horiguchi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.

Original language	English
Pages (from-to)	95-97
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/55.75723
Publication status	Published - 1991 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.75723

Cite this

@article{e0711049c9194095ad0f5582fc92310d,

title = "Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells",

abstract = "Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.",

author = "T. Ozaki and A. Nitayama and T. Hamamoto and K. Sunouchi and F. Horiguchi",

year = "1991",

month = mar,

doi = "10.1109/55.75723",

language = "English",

volume = "12",

pages = "95--97",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

AU - Ozaki, T.

AU - Nitayama, A.

AU - Hamamoto, T.

AU - Sunouchi, K.

AU - Horiguchi, F.

PY - 1991/3

Y1 - 1991/3

N2 - Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.

AB - Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.

UR - http://www.scopus.com/inward/record.url?scp=0026123575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026123575&partnerID=8YFLogxK

U2 - 10.1109/55.75723

DO - 10.1109/55.75723

M3 - Article

AN - SCOPUS:0026123575

SN - 0741-3106

VL - 12

SP - 95

EP - 97

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this