Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

T. Noda, W. Vandervorst, S. Felch, V. Parihar, A. Cuperus, R. Mcintosh, C. Vrancken, E. Rosseel, H. Bender, B. Van Daele, M. Niwa, H. Umimoto, R. Schreutelkamp, P. P. Absil, M. Jurczak, K. De Meyer, S. Biesemans, T. Y. Hoffmann

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)

Abstract

n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling. Laser-only annealing can improve the n-type dopant activation and achieve shallow junctions. KMC model with vacancy complexes indicates that laser-only annealing for nFET can achieve highly activated junctions and reduce dopant fluctuations in the channel region and that P is an attractive replacement for the As extension with laser-only anneal.

Original languageEnglish
Article number4419111
Pages (from-to)955-958
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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