Analysis of adhesion strength of interfaces between thin films using molecular dynamics technique

T. Iwasaki, H. Miura

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We have developed a molecular-dynamics technique for determining the adhesion strength of the interfaces between different materials. In this technique the extended Tersoff-type potential is applied to calculate the adhesive fracture energy defined as the difference between the total potential energy of the material-connected state and that of the material-separated state. The adhesion strength of metal/dielectric interfaces as well as metal/metal interfaces is discussed based on this fracture energy. We used this technique to determine the adhesion strength of the interfaces between ULSI-interconnect materials (Al and Cu) and diffusion-barrier materials (TiN and W). The calculated adhesive fracture energy shows that the adhesion strength increases in the order: Cu/TiN, Cu/W, Al/W, and Al/TiN. Because this result was confirmed by scratch testing on the film-laminated structure, this technique is considered to be effective for determining the adhesion strength.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume594
Publication statusPublished - 2000 Dec 11
Externally publishedYes
EventThin Films-Stress and Machanical Properties VIII - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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