Analysis for Radiation Degradation of Advanced Si Space Solar Cells

Masafumi Yamaguchi, Kan Hua Lee, Kenji Araki, Nobuaki Kojima, Yasuki Okuno, Mitsuru Imaizumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Advanced Si solar cells such as passivated emitter, hetero-junction and back contact solar cells are expected to use as space solar cells. In this paper, efficiency potential of crystalline Si space solar cells is analyzed by considering external radiative efficiency (ERE), voltage and fill factor losses. Crystalline Si space solar cells have efficiency potential of more than 26% at AM0 by realizing ERE of 20% from about 0.2% and normalized resistance of less than 0.05 from around 0.15. Non-radiative recombination and resistance losses in Si space solar cells are also discussed. Radiation degradation of Si space solar cells is also analyzed. Potential of advanced Si solar cells such as passivated emitter, hetero-junction and back contact solar cells for space applications is discussed from point view of radiation degradation.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2377-2380
Number of pages4
ISBN (Electronic)9781728104942
DOIs
Publication statusPublished - 2019 Jun
Externally publishedYes
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 2019 Jun 162019 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period19/6/1619/6/21

Keywords

  • radiation degradation
  • radiation-induced defects
  • Si space solar cells
  • surface recombination velocity

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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