Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance

Xiu Feng Han, Andrew C.C. Yu, Mikihiko Oogane, Junichirou Murai, Tadaomi Daibou, Terunobu Miyazaki

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

A series of experimental data was obtained systematically for a spin-valve-type tunnel junction of (formula presented) (3 nm)/Cu (formula presented) (formula presented) (4 nm)/Al (formula presented) (formula presented) (20 nm)/Ta (5 nm). Analyses of (i) temperature dependence of tunnel magnetoresistance (TMR) ratio and resistance from 4.2 K to room temperature, (ii) applied dc bias-voltage dependence of TMR ratio and resistance at 6.0 K and room temperature, and (iii) tunnel current I and dynamic conductance (formula presented) as functions of dc bias voltage at 6.0 K were carried out. High-TMR ratio of 64.7% at 4.2 K and 44.2% at room temperature were observed for this junction after annealing at 300 °C for an hour. An anisotropic wavelength cutoff energy of spin-wave spectrum in magnetic tunnel junctions, which is essential for self-consistent calculations, was suggested based on a series of inelastic electron tunnel spectra obtained. The main intrinsic magnetoelectric properties in such spin-valve-type tunnel junction with high magnetoresistance and low resistance can be evaluated based on the magnon-assisted inelastic excitation model and theory.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number22
DOIs
Publication statusPublished - 2001 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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