An oxide-diluted magnetic semiconductor: Mn-doped ZnO

T. Fukumura, Zhengwu Jin, A. Ohtomo, H. Koinuma, M. Kawasaki

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Abstract

Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1-xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019cm-3 can be doped into the Zn1-xMnxO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.

Original languageEnglish
Pages (from-to)3366-3368
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number21
DOIs
Publication statusPublished - 1999 Nov 22
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fukumura, T., Jin, Z., Ohtomo, A., Koinuma, H., & Kawasaki, M. (1999). An oxide-diluted magnetic semiconductor: Mn-doped ZnO. Applied Physics Letters, 75(21), 3366-3368. https://doi.org/10.1063/1.125353