An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Tetsuo Endoh; Hiroki Koike; Shoji Ikeda; Takahiro Hanyu; Hideo Ohno

doi:10.1109/JETCAS.2016.2547704

An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

Research output: Contribution to journal › Review article › peer-review

78 Citations (Scopus)

Abstract

This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

Original language	English
Article number	7458915
Pages (from-to)	109-119
Number of pages	11
Journal	IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume	6
Issue number	2
DOIs	https://doi.org/10.1109/JETCAS.2016.2547704
Publication status	Published - 2016 Jun

Keywords

CMOS
ferroelectric RAM (FeRAM)
memory
nonvolatile
phase change RAM (PCRAM)
resistive RAM (ReRAM)
spin-Transfer-Torque magnetic RAM (STT-MRAM)

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories",

abstract = "This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.",

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author = "Tetsuo Endoh and Hiroki Koike and Shoji Ikeda and Takahiro Hanyu and Hideo Ohno",

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AU - Endoh, Tetsuo

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AU - Ohno, Hideo

PY - 2016/6

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N2 - This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

AB - This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

KW - CMOS

KW - ferroelectric RAM (FeRAM)

KW - memory

KW - nonvolatile

KW - phase change RAM (PCRAM)

KW - resistive RAM (ReRAM)

KW - spin-Transfer-Torque magnetic RAM (STT-MRAM)

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An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Abstract

Keywords

ASJC Scopus subject areas

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