Abstract
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.
Original language | English |
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Article number | 7458915 |
Pages (from-to) | 109-119 |
Number of pages | 11 |
Journal | IEEE Journal on Emerging and Selected Topics in Circuits and Systems |
Volume | 6 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2016 Jun |
Keywords
- CMOS
- ferroelectric RAM (FeRAM)
- memory
- nonvolatile
- phase change RAM (PCRAM)
- resistive RAM (ReRAM)
- spin-Transfer-Torque magnetic RAM (STT-MRAM)
ASJC Scopus subject areas
- Electrical and Electronic Engineering