An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Tetsuo Endoh; Hiroki Koike; Shoji Ikeda; Takahiro Hanyu; Hideo Ohno

doi:10.1109/JETCAS.2016.2547704

An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Review article › peer-review

96 Citations (Scopus)

Abstract

This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

Original language	English
Article number	7458915
Pages (from-to)	109-119
Number of pages	11
Journal	IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume	6
Issue number	2
DOIs	https://doi.org/10.1109/JETCAS.2016.2547704
Publication status	Published - 2016 Jun

Keywords

CMOS
ferroelectric RAM (FeRAM)
memory
nonvolatile
phase change RAM (PCRAM)
resistive RAM (ReRAM)
spin-Transfer-Torque magnetic RAM (STT-MRAM)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/JETCAS.2016.2547704

Cite this

@article{b51a4c8fab714cf8ab0bac12dada1f97,

title = "An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories",

abstract = "This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.",

keywords = "CMOS, ferroelectric RAM (FeRAM), memory, nonvolatile, phase change RAM (PCRAM), resistive RAM (ReRAM), spin-Transfer-Torque magnetic RAM (STT-MRAM)",

author = "Tetsuo Endoh and Hiroki Koike and Shoji Ikeda and Takahiro Hanyu and Hideo Ohno",

note = "Publisher Copyright: {\textcopyright} 2011 IEEE.",

year = "2016",

month = jun,

doi = "10.1109/JETCAS.2016.2547704",

language = "English",

volume = "6",

pages = "109--119",

journal = "IEEE Journal on Emerging and Selected Topics in Circuits and Systems",

issn = "2156-3357",

publisher = "IEEE Circuits and Systems Society",

number = "2",

}

TY - JOUR

T1 - An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

AU - Endoh, Tetsuo

AU - Koike, Hiroki

AU - Ikeda, Shoji

AU - Hanyu, Takahiro

AU - Ohno, Hideo

PY - 2016/6

Y1 - 2016/6

N2 - This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

AB - This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

KW - CMOS

KW - ferroelectric RAM (FeRAM)

KW - memory

KW - nonvolatile

KW - phase change RAM (PCRAM)

KW - resistive RAM (ReRAM)

KW - spin-Transfer-Torque magnetic RAM (STT-MRAM)

UR - http://www.scopus.com/inward/record.url?scp=84992304872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992304872&partnerID=8YFLogxK

U2 - 10.1109/JETCAS.2016.2547704

DO - 10.1109/JETCAS.2016.2547704

M3 - Review article

AN - SCOPUS:84992304872

VL - 6

SP - 109

EP - 119

JO - IEEE Journal on Emerging and Selected Topics in Circuits and Systems

JF - IEEE Journal on Emerging and Selected Topics in Circuits and Systems

SN - 2156-3357

IS - 2

M1 - 7458915

ER -

An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this