An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories

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Abstract

This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-Torque-Transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

Original languageEnglish
Article number7458915
Pages (from-to)109-119
Number of pages11
JournalIEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume6
Issue number2
DOIs
Publication statusPublished - 2016 Jun

Keywords

  • CMOS
  • ferroelectric RAM (FeRAM)
  • memory
  • nonvolatile
  • phase change RAM (PCRAM)
  • resistive RAM (ReRAM)
  • spin-Transfer-Torque magnetic RAM (STT-MRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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