An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration

M. Suzuki, M. Suzuki, R. Kuroda, Y. Kumagai, A. Chiba, N. Miura, N. Kuriyama, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents an over 1Mfps global shutter CMOS image sensor with on-chip 480 memories per pixel using high capacitance density vertical analog memory integration technology. The prototype chips with 96H×128V pixels were fabricated with various memory fabrication conditions and ultra-high speed video capturing at 1Mfps with 480 consecutive frames is successfully demonstrated.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8.5.1-8.5.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 2017 Jan 31
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period16/12/316/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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