An over 120dB dynamic range linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Mefull well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Original languageEnglish
Article number143
JournalIS and T International Symposium on Electronic Imaging Science and Technology
Volume2020
Issue number7
DOIs
Publication statusPublished - 2020 Jan 26
Event2020 Imaging Sensors and Systems Conference, ISS 2020 - Burlingame, United States
Duration: 2020 Jan 262020 Jan 30

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications
  • Human-Computer Interaction
  • Software
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'An over 120dB dynamic range linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors'. Together they form a unique fingerprint.

Cite this