An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

Abstract

This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

Original languageEnglish
Article number9281334
Pages (from-to)152-157
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume68
Issue number1
DOIs
Publication statusPublished - 2021 Jan

Keywords

  • CMOS image sensor (CIS)
  • lateral overflow integration capacitor (LOFIC)
  • signal-to-noise ratio (SNR)
  • wide dynamic range (WDR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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