An outgas free passivation technology for semiconductor vacuum chamber using advanced anodic oxidation

Y. Kawase, M. Kitano, F. Mizutani, H. Morinaga, Y. Shirai, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Barrier type anodic oxides on aluminum-magnesium (Al-Mg) alloy in nonaqueous electrolyte solution are found to feature some excellent characteristics. Surface micro roughness is found by far less than that grown in aqueous electrolyte solution. Moisture outgassing from the barrier anodic oxides is very much limited. Even at elevated temperature, the barrier anodic oxides develop no heat cracks. They feature outstanding resistance to corrosive process gases. Anodization of Al-Mg alloys in nonaqueous electrolyte solution will be promising surface passivation of the semiconductor vacuum chambers. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationCorrosion (General)
Pages67-71
Number of pages5
Edition9
DOIs
Publication statusPublished - 2007 Dec 1
Event209th ECS Meeting - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number9
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other209th ECS Meeting
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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