An orientation ratio and ferroelectric properties of ultra-thin PTO films

K. Nishida; T. Sugino; M. Osada; M. Kakihana; T. Katoda

doi:10.1016/S0169-4332(03)00446-X

An orientation ratio and ferroelectric properties of ultra-thin PTO films

K. Nishida, T. Sugino, M. Osada, M. Kakihana, T. Katoda

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The relationship among crystallographic orientation and quality, flatness of a surface, electrical properties and thickness for lead titanate (PbTiO ₃ : PTO) ultra-thin films is reported. A crystallographic orientation changed from (100) to (001) with an increase in film thickness. However, a (001) plane orientation ratio α saturated to 0.85 and root square mean (RMS) of flatness saturated to 1.4nm when the film thickness was approximately 90nm. A PTO film thinner than approximately 90nm had a larger dielectric constant and that thicker than approximate 90nm showed ferroelectric property.

Original language	English
Pages (from-to)	312-317
Number of pages	6
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00446-X
Publication status	Published - 2003 Jun 30
Externally published	Yes

Keywords

Ferroelectrics
Film orientation
P-E property
PTO
Substrate

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(03)00446-X

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abstract = " The relationship among crystallographic orientation and quality, flatness of a surface, electrical properties and thickness for lead titanate (PbTiO 3 : PTO) ultra-thin films is reported. A crystallographic orientation changed from (100) to (001) with an increase in film thickness. However, a (001) plane orientation ratio α saturated to 0.85 and root square mean (RMS) of flatness saturated to 1.4nm when the film thickness was approximately 90nm. A PTO film thinner than approximately 90nm had a larger dielectric constant and that thicker than approximate 90nm showed ferroelectric property.",

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T1 - An orientation ratio and ferroelectric properties of ultra-thin PTO films

AU - Nishida, K.

AU - Sugino, T.

AU - Osada, M.

AU - Kakihana, M.

AU - Katoda, T.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - The relationship among crystallographic orientation and quality, flatness of a surface, electrical properties and thickness for lead titanate (PbTiO 3 : PTO) ultra-thin films is reported. A crystallographic orientation changed from (100) to (001) with an increase in film thickness. However, a (001) plane orientation ratio α saturated to 0.85 and root square mean (RMS) of flatness saturated to 1.4nm when the film thickness was approximately 90nm. A PTO film thinner than approximately 90nm had a larger dielectric constant and that thicker than approximate 90nm showed ferroelectric property.

AB - The relationship among crystallographic orientation and quality, flatness of a surface, electrical properties and thickness for lead titanate (PbTiO 3 : PTO) ultra-thin films is reported. A crystallographic orientation changed from (100) to (001) with an increase in film thickness. However, a (001) plane orientation ratio α saturated to 0.85 and root square mean (RMS) of flatness saturated to 1.4nm when the film thickness was approximately 90nm. A PTO film thinner than approximately 90nm had a larger dielectric constant and that thicker than approximate 90nm showed ferroelectric property.

KW - Ferroelectrics

KW - Film orientation

KW - P-E property

KW - PTO

KW - Substrate

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