Abstract
Organic light emitting devices (OLEDs) using a transparent semiconductor rutile TÍO2 film on r-sapphire substrate as an anode shows fine surface emission. The OLED structure is TiO2/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/N,N′-Di-[(1-naphthalenyl)-N,N′- diphenyl]-(l,l'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The obtained maximum luminance and current efficiency are 1340 cd/m2 at 21.0 V and 1.6 cd/A at 15.0 V, respectively. Current efficiency and turn-on voltage of the OLEDs systematically depend on the resistivity of the TiO2 anode. This trend can be explained by dependence of hole injection efficiency on the resistivity.
Original language | English |
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Pages (from-to) | L1061-L1063 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 45 |
Issue number | 37-41 |
DOIs | |
Publication status | Published - 2006 Oct 1 |
Keywords
- Alq
- Anode
- Hole injection
- Organic light emitting device
- Oxide semiconductor
- TiO
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)