An organic light emitting device employing transparent rutile TiO 2 as an anode

Masaki Nakano; Tomoteru Fukumura; Hidemi Toyosaki; Kazunori Ueno; Masashi Kawasaki

doi:10.1.143/JJAP.45.L1061

An organic light emitting device employing transparent rutile TiO ₂ as an anode

Masaki Nakano, Tomoteru Fukumura, Hidemi Toyosaki, Kazunori Ueno, Masashi Kawasaki

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

Organic light emitting devices (OLEDs) using a transparent semiconductor rutile TÍO2 film on r-sapphire substrate as an anode shows fine surface emission. The OLED structure is TiO₂/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/N,N′-Di-[(1-naphthalenyl)-N,N′- diphenyl]-(l,l'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxyquinoline) aluminum (Alq₃)/LiF/Al. The obtained maximum luminance and current efficiency are 1340 cd/m² at 21.0 V and 1.6 cd/A at 15.0 V, respectively. Current efficiency and turn-on voltage of the OLEDs systematically depend on the resistivity of the TiO₂ anode. This trend can be explained by dependence of hole injection efficiency on the resistivity.

Original language	English
Pages (from-to)	L1061-L1063
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	37-41
DOIs	https://doi.org/10.1.143/JJAP.45.L1061
Publication status	Published - 2006 Oct 1

Keywords

Alq
Anode
Hole injection
Organic light emitting device
Oxide semiconductor
TiO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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Nakano, M., Fukumura, T., Toyosaki, H., Ueno, K., & Kawasaki, M. (2006). An organic light emitting device employing transparent rutile TiO ₂ as an anode. Japanese Journal of Applied Physics, Part 2: Letters, 45(37-41), L1061-L1063. https://doi.org/10.1.143/JJAP.45.L1061

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title = "An organic light emitting device employing transparent rutile TiO 2 as an anode",

abstract = "Organic light emitting devices (OLEDs) using a transparent semiconductor rutile T{\'I}O2 film on r-sapphire substrate as an anode shows fine surface emission. The OLED structure is TiO2/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/N,N′-Di-[(1-naphthalenyl)-N,N′- diphenyl]-(l,l'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The obtained maximum luminance and current efficiency are 1340 cd/m2 at 21.0 V and 1.6 cd/A at 15.0 V, respectively. Current efficiency and turn-on voltage of the OLEDs systematically depend on the resistivity of the TiO2 anode. This trend can be explained by dependence of hole injection efficiency on the resistivity.",

keywords = "Alq, Anode, Hole injection, Organic light emitting device, Oxide semiconductor, TiO",

author = "Masaki Nakano and Tomoteru Fukumura and Hidemi Toyosaki and Kazunori Ueno and Masashi Kawasaki",

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AU - Nakano, Masaki

AU - Fukumura, Tomoteru

AU - Toyosaki, Hidemi

AU - Ueno, Kazunori

AU - Kawasaki, Masashi

PY - 2006/10/1

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N2 - Organic light emitting devices (OLEDs) using a transparent semiconductor rutile TÍO2 film on r-sapphire substrate as an anode shows fine surface emission. The OLED structure is TiO2/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/N,N′-Di-[(1-naphthalenyl)-N,N′- diphenyl]-(l,l'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The obtained maximum luminance and current efficiency are 1340 cd/m2 at 21.0 V and 1.6 cd/A at 15.0 V, respectively. Current efficiency and turn-on voltage of the OLEDs systematically depend on the resistivity of the TiO2 anode. This trend can be explained by dependence of hole injection efficiency on the resistivity.

AB - Organic light emitting devices (OLEDs) using a transparent semiconductor rutile TÍO2 film on r-sapphire substrate as an anode shows fine surface emission. The OLED structure is TiO2/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/N,N′-Di-[(1-naphthalenyl)-N,N′- diphenyl]-(l,l'-biphenyl)-4,4'-diamine (α-NPD)/tris(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. The obtained maximum luminance and current efficiency are 1340 cd/m2 at 21.0 V and 1.6 cd/A at 15.0 V, respectively. Current efficiency and turn-on voltage of the OLEDs systematically depend on the resistivity of the TiO2 anode. This trend can be explained by dependence of hole injection efficiency on the resistivity.

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KW - Oxide semiconductor

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