An optimum design of the LOFIC CMOS image sensor for high sensitivity, low noise and high full well capacity

Nana Akahane, Woonghee Lee, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

It is indispensable for high quality image sensors to have performances of high sensitivity, low noise, high full well capacity and good linear response. The CMOS image sensor with the lateral overflow integration capacitor (LOFIC) has been accomplishing these performances because of its wide dynamic range capability in one exposure. Recently, we have improved the SNR of the LOFIC CMOS image sensor and achieved the number of input-referred noise electrons of 2 e- or below without any column amplifier circuits by increasing the photo-electric conversion gain at the floating diffusion (FD) in pixel as keeping low dark current, good uniformity and high well capacity. It is clear that the relation among the conversion gain, the SNR and the full well capacity decides the optimum design for the FD capacitance and the LOFIC to realize a high quality image sensor. In this paper, the optimum design method of the LOFIC CMOS image sensor for high sensitivity, low noise and high full well capacity is discussed through theoretical analysis and experiments by using the fabricated LOFIC CMOS image sensor.

Original languageEnglish
Title of host publicationProceedings of SPIE-IS and T Electronic Imaging - Digital Photography IV
Volume6817
DOIs
Publication statusPublished - 2008 May 21
EventDigital Photography IV - San Jose, CA, United States
Duration: 2008 Jan 282008 Jan 29

Other

OtherDigital Photography IV
CountryUnited States
CitySan Jose, CA
Period08/1/2808/1/29

Keywords

  • CMOS image sensor
  • High conversion gain
  • High full well capacity
  • High SNR
  • Low input-referred noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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