An LSI for massive parallel electron beam lithography: Its design and evaluation

Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Naokatsu Ikegami, Akira Kojima, Ryosuke Kaneko, Kentaro Totsu, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

An LSI for the Massive Parallel Electron Beam Lithography using nc-Si (Nano Cristal Silicon) has been developed. It can drive a 100×100 electron emitter as an active matrix electron emitter with an innovative aberration correction scheme, a compensation scheme for electron beam intensity variation and a test circuit for testing LSI during integration on the system. This LSI was evaluated and confirmed its basic function of the active matrix, the electron emitter process variation compensation and the test for integrated devices.

Original languageEnglish
Pages (from-to)374-381
Number of pages8
JournalIEEJ Transactions on Sensors and Micromachines
Volume135
Issue number10
DOIs
Publication statusPublished - 2015 Oct 1

Keywords

  • Aberration correction
  • Active matrix Variation compensation
  • Electron beam lithography
  • Element isolation
  • Integrated circuit

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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