An improved self-aligned ohmic-contact process for graphene-channel field-effect transistors

Mastura Hussin; Kenta Sugawara; Tetsuya Suemitsu; Taiichi Otsuji

doi:10.1364/jsap.2014.17p_c3_5

An improved self-aligned ohmic-contact process for graphene-channel field-effect transistors

Mastura Hussin, Kenta Sugawara, Tetsuya Suemitsu, Taiichi Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	JSAP-OSA Joint Symposia, JSAP 2014
Publisher	Optical Society of America (OSA)
ISBN (Electronic)	9784863484436
DOIs	https://doi.org/10.1364/jsap.2014.17p_c3_5
Publication status	Published - 2014 Sep 1
Event	JSAP-OSA Joint Symposia, JSAP 2014 - Sapporo, Hokkaido, Japan Duration: 2014 Sep 17 → 2014 Sep 20

Publication series

Name	JSAP-OSA Joint Symposia, JSAP 2014

Other

Other	JSAP-OSA Joint Symposia, JSAP 2014
Country/Territory	Japan
City	Sapporo, Hokkaido
Period	14/9/17 → 14/9/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/jsap.2014.17p_c3_5

Cite this

Hussin, M, Sugawara, K, Suemitsu, T & Otsuji, T 2014, An improved self-aligned ohmic-contact process for graphene-channel field-effect transistors. in JSAP-OSA Joint Symposia, JSAP 2014. JSAP-OSA Joint Symposia, JSAP 2014, Optical Society of America (OSA), JSAP-OSA Joint Symposia, JSAP 2014, Sapporo, Hokkaido, Japan, 14/9/17. https://doi.org/10.1364/jsap.2014.17p_c3_5

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author = "Mastura Hussin and Kenta Sugawara and Tetsuya Suemitsu and Taiichi Otsuji",

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PY - 2014/9/1

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AN - SCOPUS:85088353591

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An improved self-aligned ohmic-contact process for graphene-channel field-effect transistors

Publication series

Other

ASJC Scopus subject areas

Access to Document

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Cite this