An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs

Y. X. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, K. Ishii, T. Shimizu, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optimal TiN deposition and the thermal stability of the puttered TiN have experimentally been investigated for the advanced gate-first FinFET fabrication. It was experimentally found that the φTiN markedly decreases and the Vth can be set to a lower value with increasing TR to 855°C owing to the pile-up of nitrogen atoms at the Si-SiO2 interface. These experimental results are very useful to set the correct V th for TiN gate-first FinFETs.

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages201-202
Number of pages2
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 2005 Dec 72005 Dec 9

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • Engineering(all)

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