An experimental study of TiN gate FinFET SRAM with (111)-oriented sidewall channels

Y. X. Liu, T. Hayashida, T. Matsukawa, K. Endo, S. O'uchi, K. Sakamoto, M. Masahara, K. Ishii, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

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Engineering & Materials Science