An experimental observation of photo-induced carrier multiplication in hydrogenated amorphous silicon

S. Sugawa; K. Ohmi; M. Yamanobe; Y. Osada

doi:10.1016/0038-1098(91)90709-5

An experimental observation of photo-induced carrier multiplication in hydrogenated amorphous silicon

S. Sugawa, K. Ohmi, M. Yamanobe, Y. Osada

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier.

Original language	English
Pages (from-to)	373-376
Number of pages	4
Journal	Solid State Communications
Volume	80
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(91)90709-5
Publication status	Published - 1991 Nov
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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AU - Osada, Y.

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