Abstract
A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier.
| Original language | English |
|---|---|
| Pages (from-to) | 373-376 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 80 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1991 Nov |
| Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry