Abstract
A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier.
Original language | English |
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Pages (from-to) | 373-376 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 80 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1991 Nov |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry