An experimental observation of photo-induced carrier multiplication in hydrogenated amorphous silicon

S. Sugawa, K. Ohmi, M. Yamanobe, Y. Osada

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier.

Original languageEnglish
Pages (from-to)373-376
Number of pages4
JournalSolid State Communications
Volume80
Issue number6
DOIs
Publication statusPublished - 1991 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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