An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals

Eiji Taniguchi; Mitsuhiro Shimozawa; Takayuki Ikushima; Keiichi Sadahiro; Takatoshi Katsura; Kenichi Maeda; Kenji Itoh; Noriharu Suematsu; Tadashi Takagi; Osami Ishida

An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals

Eiji Taniguchi, Mitsuhiro Shimozawa, Takayuki Ikushima, Keiichi Sadahiro, Takatoshi Katsura, Kenichi Maeda, Kenji Itoh, Noriharu Suematsu, Tadashi Takagi, Osami Ishida

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDP's) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA is employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of shotky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.

Original language	English
Pages	133-136
Number of pages	4
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2002 Jun 2 → 2002 Jun 4

Other

Other	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country	United States
City	Seatle, WA
Period	02/6/2 → 02/6/4

ASJC Scopus subject areas

Engineering(all)

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An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals. / Taniguchi, Eiji; Shimozawa, Mitsuhiro; Ikushima, Takayuki; Sadahiro, Keiichi; Katsura, Takatoshi; Maeda, Kenichi; Itoh, Kenji; Suematsu, Noriharu; Takagi, Tadashi; Ishida, Osami.

2002. 133-136 Paper presented at 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States.

Research output: Contribution to conference › Paper › peer-review

Taniguchi, Eiji ; Shimozawa, Mitsuhiro ; Ikushima, Takayuki ; Sadahiro, Keiichi ; Katsura, Takatoshi ; Maeda, Kenichi ; Itoh, Kenji ; Suematsu, Noriharu ; Takagi, Tadashi ; Ishida, Osami. / An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals. Paper presented at 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States.4 p.

@conference{df899a1cd2cc438a8a40d239956e92a3,

title = "An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals",

abstract = "An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDP's) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA is employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of shotky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.",

author = "Eiji Taniguchi and Mitsuhiro Shimozawa and Takayuki Ikushima and Keiichi Sadahiro and Takatoshi Katsura and Kenichi Maeda and Kenji Itoh and Noriharu Suematsu and Tadashi Takagi and Osami Ishida",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "133--136",

note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

}

TY - CONF

T1 - An even harmonic type direct conversion SiGe-MMIC receiver for W-CDMA mobile terminals

AU - Taniguchi, Eiji

AU - Shimozawa, Mitsuhiro

AU - Ikushima, Takayuki

AU - Sadahiro, Keiichi

AU - Katsura, Takatoshi

AU - Maeda, Kenichi

AU - Itoh, Kenji

AU - Suematsu, Noriharu

AU - Takagi, Tadashi

AU - Ishida, Osami

PY - 2002/1/1

Y1 - 2002/1/1

N2 - An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDP's) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA is employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of shotky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.

AB - An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDP's) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA is employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of shotky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.

UR - http://www.scopus.com/inward/record.url?scp=0036313662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036313662&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036313662

SP - 133

EP - 136

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -