An even harmonic type direct conversion MMIC receiver for W-CDMA mobile terminals in SiGe HBT technology is described. A 2-stage low noise amplifier (LNA) and two self biased anti-parallel diode pairs (APDP's) for even harmonic mixer (EH-MIX) are integrated into a single chip. The LNA is employed dual bias feed circuit to improve the output power and linearity. The EH-MIX can obtain high IIP2 by using APDP. Noise performance of shotky barrier diode (SBD) for APDP fabricated in SiGe process is lower than that of conventional SBD in the market. Both fabricated LNA and EH-MIX demonstrated high RF performances, and they are applicable to RF front-end of W-CDMA mobile terminals.
|Number of pages||4|
|Publication status||Published - 2002 Jan 1|
|Event||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States|
Duration: 2002 Jun 2 → 2002 Jun 4
|Other||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium|
|Period||02/6/2 → 02/6/4|
ASJC Scopus subject areas