An electrostatic-discharge (ESD) protection device with low parasitic capacitance utilizing a depletion-layer-extended transistor (DET) for RF CMOS ICs

Takahiro Ohnakado, Satoshi Yamakawa, Akihiko Furukawa, Kazuyasu Nishikawa, Takaaki Murakami, Yasushi Hashizume, Kazuyuki Sugahara, Jun Tomisawa, Noriharu Suematsu, Tatsuo Oomori

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