An electronically-driven volume transition in CeSi2-xGax

H. Mori, Nobuya Sato, T. Sato

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


The pseudobinary compounds CeSi2-xGax were prepared, and the lattice parameters and the susceptibilities were measured. At the Si-rich end, 0≦x<0.2, the system behaves as one with a high (∼200K) Kondo temperature exhibiting no magnetic order. For 0.5<x≦1.3, the system shows the unit-cell volume 3% larger and orders ferromagnetically around 10K. The α-ThSi2 structure is retained up to x=1.3, but one observes a two-phase region for 0.2≦x≦0.5, consisting of small- and large-volume phases. This volume transition is magnetically one of the most drastic compared to previously studied Ce-based pseudobinaries.

Original languageEnglish
Pages (from-to)955-958
Number of pages4
JournalSolid State Communications
Issue number10
Publication statusPublished - 1984 Mar

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'An electronically-driven volume transition in CeSi2-xGax'. Together they form a unique fingerprint.

Cite this