An electron-beam-induced current investigation of electrical defects in high-k gate stacks

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We succeeded in applying electron-beam-induced current (EBIC) technique to visualize the current leakage sites in the MOS devices with HfSiON gate dielectrics. The occurrence of initial leakage sites in fresh devices has been investigated with consideration of the effects of well type, gate size and gate electrode. Stress-induced leakage and breakdown sites were studied by in situ voltage stress and EBIC characterization. Finally, the microstructure and physical damages at various leakage sites were characterized by TEM. Based on the EBIC and TEM results, the leakage and breakdown mechanisms of HfSiON gate stacks were discussed.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages299-313
Number of pages15
Edition2
DOIs
Publication statusPublished - 2010 Dec 30
Event4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 28

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/28

ASJC Scopus subject areas

  • Engineering(all)

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