An electron-beam-induced current investigation of electrical defects in high-k gate stacks

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


We succeeded in applying electron-beam-induced current (EBIC) technique to visualize the current leakage sites in the MOS devices with HfSiON gate dielectrics. The occurrence of initial leakage sites in fresh devices has been investigated with consideration of the effects of well type, gate size and gate electrode. Stress-induced leakage and breakdown sites were studied by in situ voltage stress and EBIC characterization. Finally, the microstructure and physical damages at various leakage sites were characterized by TEM. Based on the EBIC and TEM results, the leakage and breakdown mechanisms of HfSiON gate stacks were discussed.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
PublisherElectrochemical Society Inc.
Number of pages15
ISBN (Electronic)9781607681427
ISBN (Print)9781566777926
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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