An application of electrolytic deposition for the electronic passivation of GaAs surfaces through the formation of thin organic films

K. Asai, T. Miyashita, K. Ishigure, S. Fukatsu

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report a new method, based on electrolytic deposition, to passivate GaAs surfaces electronically with thin organic films. This enables us to perform the surface treatment with a reduction in the surface recombination velocity and the formation of insulator layers at the same time, without an energetic process, such as evaporation, sputtering or growth from a plasma, which results in the production of damaged surface layers involving a high density of surface states. The film-forming material used has a moiety containing reactive sulfur (-S-) that is assumed to bond directly to the GaAs surface, and long alkyl chains acting as an insulating part. Electronic investigations of the treated surface have revealed that the present method substantially improves the surface electronic properties of GaAs.

Original languageEnglish
Pages (from-to)37-41
Number of pages5
JournalSurface Science
Volume306
Issue number1-2
DOIs
Publication statusPublished - 1994 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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