An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

H. W. Yeom; T. Abukawa; Y. Takakuwa; M. Nakamura; M. Kimura; T. Shimatani; Y. Mori; A. Kakizaki; S. Kono

doi:10.1016/0368-2048(96)02950-7

An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki, S. Kono

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2×2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S₁, S₂, S¹₂, S₃ and S¹₃, are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-E_B state S₁ is assigned as the surface state due to the dimer bond within the Al (In) dimer and S₂, S¹₂, S₃ and S¹₃ due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure.

Original language	English
Pages (from-to)	177-180
Number of pages	4
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	80
DOIs	https://doi.org/10.1016/0368-2048(96)02950-7
Publication status	Published - 1996 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/0368-2048(96)02950-7

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title = "An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces",

abstract = "Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2×2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S1, S2, S12, S3 and S13, are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-EB state S1 is assigned as the surface state due to the dimer bond within the Al (In) dimer and S2, S12, S3 and S13 due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure.",

author = "Yeom, {H. W.} and T. Abukawa and Y. Takakuwa and M. Nakamura and M. Kimura and T. Shimatani and Y. Mori and A. Kakizaki and S. Kono",

year = "1996",

month = may,

doi = "10.1016/0368-2048(96)02950-7",

language = "English",

volume = "80",

pages = "177--180",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

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T1 - An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

AU - Yeom, H. W.

AU - Abukawa, T.

AU - Takakuwa, Y.

AU - Nakamura, M.

AU - Kimura, M.

AU - Shimatani, T.

AU - Mori, Y.

AU - Kakizaki, A.

AU - Kono, S.

PY - 1996/5

Y1 - 1996/5

N2 - Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2×2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S1, S2, S12, S3 and S13, are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-EB state S1 is assigned as the surface state due to the dimer bond within the Al (In) dimer and S2, S12, S3 and S13 due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure.

AB - Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2×2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S1, S2, S12, S3 and S13, are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-EB state S1 is assigned as the surface state due to the dimer bond within the Al (In) dimer and S2, S12, S3 and S13 due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure.

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VL - 80

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JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

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An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

Abstract

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