An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2×2-Al and -In surfaces

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki, S. Kono

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation was employed to study the electronic structure of single-domain Si(001)2×2-Al and -In surfaces. Five different dispersing surface state bands, denoted as S1, S2, S12, S3 and S13, are identified within bulk band gap with similar dispersions for both surfaces. From their dispersions and symmetry properties, the lowest-EB state S1 is assigned as the surface state due to the dimer bond within the Al (In) dimer and S2, S12, S3 and S13 due to the back bonds between Al (In) and top-most Si atoms. This result also gives a corroborating evidence for the parallel dimer model of the surface structure.

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume80
DOIs
Publication statusPublished - 1996 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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