Abstract
A steady-state current-voltage characteristics of fully-depleted surrounding gate transistor (FD-SGT) with short channel effects, such as threshold voltage lowering and channel length modulation, is analyzed. First, new threshold voltage model of FDSGT, which takes threshold voltage lowering caused by decreasing channel length into consideration, are proposed. We express surface potential as capacitance couple between channel and other electrodes such as gate, source and drain. And we analyze how surface potential distribution deviates from long channel surface potential distribution with source and drain effects when channel length becomes short. Next, by using newly proposed model, current-voltage characteristics equation with short channel effects is analytically formulated for the first time. In comparison with a three-dimensional (3D) device simulator, the results of newly proposed threshold voltage model show good agreement within 0.011 V average error. And newly formulated current-voltage characteristics equation also shows good agreement within 0.95% average error. The results of this work make it possible to clear the device designs of FD-SGT theoretically and show the new viewpoints for future ULSI's with SGT.
| Original language | English |
|---|---|
| Pages (from-to) | 911-916 |
| Number of pages | 6 |
| Journal | IEICE Transactions on Electronics |
| Volume | E80-C |
| Issue number | 7 |
| Publication status | Published - 1997 |
Keywords
- Current-voltage characteristics
- FD-SGT
- SCT
- Short channel effect
- Threshold voltage
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering