An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh; Riichiroh Shirota; Masaki Momodomi; Fujio Masuoka

doi:10.1109/16.43828

An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi, Fujio Masuoka

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

Original language	English
Pages (from-to)	290-296
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/16.43828
Publication status	Published - 1990 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.",

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An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Abstract

ASJC Scopus subject areas

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