An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

Original languageEnglish
Pages (from-to)290-296
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume37
Issue number1
DOIs
Publication statusPublished - 1990 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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