This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.
|Number of pages||7|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1990 Jan|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering