An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe

    Research output: Contribution to journalConference articlepeer-review

    11 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)458-459+609
    JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
    Volume48
    Publication statusPublished - 2005 Dec 6
    Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
    Duration: 2005 Feb 62005 Feb 10

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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