Amorphous stability of HfO                         2                          based ternary and binary composition spread oxide films as alternative gate dielectrics

K. Hasegawa; P. Ahmet; N. Okazaki; T. Hasegawa; K. Fujimoto; M. Watanabe; T. Chikyow; H. Koinuma

doi:10.1016/S0169-4332(03)00903-6

Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics

K. Hasegawa, P. Ahmet, N. Okazaki, T. Hasegawa, K. Fujimoto, M. Watanabe, T. Chikyow, H. Koinuma

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

A ternary alloyed thin film library of HfO ₂ -Y ₂ O ₃ -Al ₂ O ₃ was grown on a Si(1 0 0) substrate in a few hours by a new pulsed laser deposition (PLD) system installed with a masking and substrate rotating scheme. This specially designed combinatorial ternary composition spread method enabled us to fabricate continuous ternary and binary composition spread film libraries. It is noteworthy that the library made by this system is addressable; each film composition covers the full range (from 0 to 100%) and can be directly correlated with the film location in the ternary and binary phase diagram. Rapid permittivity measurement on the film libraries was carried out by a scanning microwave microscope, while the crystal structure was by a combinatorial X-ray diffractometer (XRD). The (HfO ₂ ) ₆ (Y ₂ O ₃ ) ₁ (Al ₂ O ₃ ) ₃ ternary composition area in an amorphous phase was found to have a dielectric constant higher than HfO ₂ -Y ₂ O ₃ binary area. This ternary oxide is promising as amorphous gate dielectric material.

Original language	English
Pages (from-to)	229-232
Number of pages	4
Journal	Applied Surface Science
Volume	223
Issue number	1-3
DOIs	https://doi.org/10.1016/S0169-4332(03)00903-6
Publication status	Published - 2004 Feb 15
Externally published	Yes

Keywords

Amorphous
Combinatorial
High-k
Ternary oxide

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00903-6

Cite this

Hasegawa, K., Ahmet, P., Okazaki, N., Hasegawa, T., Fujimoto, K., Watanabe, M., Chikyow, T., & Koinuma, H. (2004). Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics Applied Surface Science, 223(1-3), 229-232. https://doi.org/10.1016/S0169-4332(03)00903-6

Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics . / Hasegawa, K.; Ahmet, P.; Okazaki, N.; Hasegawa, T.; Fujimoto, K.; Watanabe, M.; Chikyow, T.; Koinuma, H.

In: Applied Surface Science, Vol. 223, No. 1-3, 15.02.2004, p. 229-232.

Research output: Contribution to journal › Article › peer-review

Hasegawa, K, Ahmet, P, Okazaki, N, Hasegawa, T, Fujimoto, K, Watanabe, M, Chikyow, T & Koinuma, H 2004, ' Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics ', Applied Surface Science, vol. 223, no. 1-3, pp. 229-232. https://doi.org/10.1016/S0169-4332(03)00903-6

Hasegawa K, Ahmet P, Okazaki N, Hasegawa T, Fujimoto K, Watanabe M et al. Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics Applied Surface Science. 2004 Feb 15;223(1-3):229-232. https://doi.org/10.1016/S0169-4332(03)00903-6

Hasegawa, K. ; Ahmet, P. ; Okazaki, N. ; Hasegawa, T. ; Fujimoto, K. ; Watanabe, M. ; Chikyow, T. ; Koinuma, H. / Amorphous stability of HfO ₂ based ternary and binary composition spread oxide films as alternative gate dielectrics In: Applied Surface Science. 2004 ; Vol. 223, No. 1-3. pp. 229-232.

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title = " Amorphous stability of HfO 2 based ternary and binary composition spread oxide films as alternative gate dielectrics ",

abstract = " A ternary alloyed thin film library of HfO 2 -Y 2 O 3 -Al 2 O 3 was grown on a Si(1 0 0) substrate in a few hours by a new pulsed laser deposition (PLD) system installed with a masking and substrate rotating scheme. This specially designed combinatorial ternary composition spread method enabled us to fabricate continuous ternary and binary composition spread film libraries. It is noteworthy that the library made by this system is addressable; each film composition covers the full range (from 0 to 100%) and can be directly correlated with the film location in the ternary and binary phase diagram. Rapid permittivity measurement on the film libraries was carried out by a scanning microwave microscope, while the crystal structure was by a combinatorial X-ray diffractometer (XRD). The (HfO 2 ) 6 (Y 2 O 3 ) 1 (Al 2 O 3 ) 3 ternary composition area in an amorphous phase was found to have a dielectric constant higher than HfO 2 -Y 2 O 3 binary area. This ternary oxide is promising as amorphous gate dielectric material.",

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