Abstract
The formation of amorphous silicon using a silicon network polymer as a precursor was investigated. Poly(n-propylsilyne), which has a silicon network structure, was heat-treated in vacuo. The organic side group of poly(n-propylsilyne) disappeared completely and the optical band gap Eg,opt decreased from 2.91 to 1.29 eV by heat-treatment at 400°C. The heat-treated poly(n-propylsilyne) showed a far-infared absorption spectrum similar to amorphous silicon.
| Original language | English |
|---|---|
| Pages (from-to) | 132-136 |
| Number of pages | 5 |
| Journal | Chemical Physics Letters |
| Volume | 207 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 1993 May 21 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Cite this
Watanabe, A., Nagai, Y., Matsuda, M., Suezawa, M., & Sumino, K. (1993). Amorphous silicon structure of heat-treated poly(n-propylsilyne) studied by far-infrared spectroscopy. Chemical Physics Letters, 207(2-3), 132-136. https://doi.org/10.1016/0009-2614(93)87003-L