TY - JOUR
T1 - Amorphous silicon structure of heat-treated poly(n-propylsilyne) studied by far-infrared spectroscopy
AU - Watanabe, A.
AU - Nagai, Y.
AU - Matsuda, M.
AU - Suezawa, M.
AU - Sumino, K.
PY - 1993/5/21
Y1 - 1993/5/21
N2 - The formation of amorphous silicon using a silicon network polymer as a precursor was investigated. Poly(n-propylsilyne), which has a silicon network structure, was heat-treated in vacuo. The organic side group of poly(n-propylsilyne) disappeared completely and the optical band gap Eg,opt decreased from 2.91 to 1.29 eV by heat-treatment at 400°C. The heat-treated poly(n-propylsilyne) showed a far-infared absorption spectrum similar to amorphous silicon.
AB - The formation of amorphous silicon using a silicon network polymer as a precursor was investigated. Poly(n-propylsilyne), which has a silicon network structure, was heat-treated in vacuo. The organic side group of poly(n-propylsilyne) disappeared completely and the optical band gap Eg,opt decreased from 2.91 to 1.29 eV by heat-treatment at 400°C. The heat-treated poly(n-propylsilyne) showed a far-infared absorption spectrum similar to amorphous silicon.
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U2 - 10.1016/0009-2614(93)87003-L
DO - 10.1016/0009-2614(93)87003-L
M3 - Article
AN - SCOPUS:0004899970
VL - 207
SP - 132
EP - 136
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 2-3
ER -