The anodic oxidation in AGW electrolyte is applied to Al/a-Si:H structures to form Al//2O//3/native oxide/a-Si:H gate structure. Interface properties of this MOS structure as well as fabrication of a-Si:H MOSFETs are investigated. Resulting FETs show maximum effective mobility of 0. 2 cm**2/vs after proper low temperature annealing in H//2. The feasibility of a planar a-Si integrated circuit is demonstrated by fabricating integrated image sensors.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|ISBN (Print)||4930813077, 9784930813077|
|Publication status||Published - 1984|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas