AMORPHOUS SILICON MOSFETs BY ANODIC OXIDATION.

Hidekazu Yamamoto, Satoshi Arimoto, Hideo Ohno, Hideki Hasegawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The anodic oxidation in AGW electrolyte is applied to Al/a-Si:H structures to form Al//2O//3/native oxide/a-Si:H gate structure. Interface properties of this MOS structure as well as fabrication of a-Si:H MOSFETs are investigated. Resulting FETs show maximum effective mobility of 0. 2 cm**2/vs after proper low temperature annealing in H//2. The feasibility of a planar a-Si integrated circuit is demonstrated by fabricating integrated image sensors.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages547-550
Number of pages4
ISBN (Print)4930813077, 9784930813077
DOIs
Publication statusPublished - 1984
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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