Amorphous-like nanocrystalline γ-Al2O3 films prepared by MOCVD

Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Alumina (Al2O3) films were prepared by metalorganic chemical vapor deposition using aluminum tri-acetylacetonate as a precursor. The effects of deposition conditions on film phase, microstructure, and deposition rate were investigated. γ-Al2O3 films were obtained at substrate temperatures ranging between 1173 and 1373 K and total chamber pressures ranging between 400 and 1000 Pa, whereas α-Al2O3 films incorporating a small amount of the γ phase were obtained at 1373 K and 800 Pa. Al2O3 films prepared at 1173 K showed a halo in X-ray diffraction patterns, consistent with amorphous structures. However, TEM observations suggested that these films consisted of a nanocrystalline γ-Al2O3 phase containing trace amounts of carbon.

Original languageEnglish
Pages (from-to)2170-2174
Number of pages5
JournalSurface and Coatings Technology
Volume204
Issue number14
DOIs
Publication statusPublished - 2010 Apr 15

Keywords

  • Alumina
  • Coating
  • MOCVD
  • Microstructure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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