Amorphous In-Si-O Films Fabricated via Solution Processing

Hani Esmael Jan, Ha Hoang, Tsubasa Nakamura, Tomoaki Koga, Toshiaki Ina, Tomoya Uruga, Takio Kizu, Kazuhito Tsukagoshi, Toshihide Nabatame, Akihiko Fujiwara

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We report the characteristics of an amorphous oxide semiconductor In-Si-O fabricated via solution processing. In-Si-O thin films with nominal silicon concentration of 0 at.%, 1 at.%, 3 at.%, 5 at.%, 9 at.%, 50 at.%, and 100 at.% were fabricated via spin coating. The films were characterized via thermal desorption spectroscopy (TDS), x-ray reflectivity, x-ray diffraction (XRD), extended x-ray absorption fine structure (EXAFS), and electrical resistance measurements. TDS analysis suggested that organic residues, such as organic functional groups from raw materials and solvents, were almost completely desorbed from the films at approximately 400°C. The XRD and EXAFS analyses confirmed that pure In2O3 crystallizes at approximately 350°C and that the crystallization temperature increases with the silicon concentration. In-Si-O films with silicon concentration above 3 at.% exhibited high electrical resistance, indicating that films fabricated via spin coating contain few oxygen vacancies. These results suggest that In-Si-O thin films have significant potential for use as channels in field-effect transistors designed for next-generation flat-panel displays.

Original languageEnglish
Pages (from-to)3610-3614
Number of pages5
JournalJournal of Electronic Materials
Issue number6
Publication statusPublished - 2017 Jun 1
Externally publishedYes


  • Amorphous oxide semiconductor
  • solution process
  • spin coating
  • thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Amorphous In-Si-O Films Fabricated via Solution Processing'. Together they form a unique fingerprint.

Cite this