Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar

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1 Citation (Scopus)

Abstract

Heavier noble gases Kr and Xe instead of the lighter Ar during the magnetron-sputtering deposition of amorphous indium-gallium-zinc oxide films are introduced in fabricating their thin-film transistors (TFTs). Heavy noble gases can reduce damage to film induced by ion bombardment during the sputtering depositions. Higher field-effect mobility with better gate bias stability can be obtained in the heavier-noble-gas sputtered TFTs. Raman spectroscopic analysis and X-ray reflectometry respectively suggest that the disordered structure in the film is suppressed, and the film becomes denser by introducing heavy noble gases, corresponding to the improvement of TFT performance.

Original languageEnglish
Pages (from-to)517-523
Number of pages7
JournalJournal of the Society for Information Display
Volume21
Issue number12
DOIs
Publication statusPublished - 2013 Dec

Keywords

  • IGZO
  • TFT
  • damage
  • krypton
  • magnetron sputtering
  • xenon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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