Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

Maryamsadat Hosseini; Junichi Koike; Yuji Sutou; Larry Zhao; Steven Lai; Reza Arghavani

doi:10.1109/IITC-AMC.2016.7507718

Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

Maryamsadat Hosseini, Junichi Koike, Yuji Sutou, Larry Zhao, Steven Lai, Reza Arghavani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

Original language	English
Title of host publication	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	162-164
Number of pages	3
ISBN (Electronic)	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507718
Publication status	Published - 2016 Jul 8
Event	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 2016 May 23 → 2016 May 26

Publication series

Name	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country	United States
City	San Jose
Period	16/5/23 → 16/5/26

Keywords

cobalt
contact plug
diffusion barrier layer
metal-oxide-semiconductor (MOS)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films

Access to Document

10.1109/IITC-AMC.2016.7507718

Fingerprint Dive into the research topics of 'Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure'. Together they form a unique fingerprint.

Cite this

Hosseini, M., Koike, J., Sutou, Y., Zhao, L., Lai, S., & Arghavani, R. (2016). Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 162-164). [7507718] (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507718

Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. / Hosseini, Maryamsadat; Koike, Junichi ; Sutou, Yuji; Zhao, Larry; Lai, Steven; Arghavani, Reza.

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 162-164 7507718 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosseini, M, Koike, J , Sutou, Y, Zhao, L, Lai, S & Arghavani, R 2016, Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507718, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 162-164, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 16/5/23. https://doi.org/10.1109/IITC-AMC.2016.7507718

Hosseini M, Koike J , Sutou Y, Zhao L, Lai S, Arghavani R. Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 162-164. 7507718. (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). https://doi.org/10.1109/IITC-AMC.2016.7507718

Hosseini, Maryamsadat ; Koike, Junichi ; Sutou, Yuji ; Zhao, Larry ; Lai, Steven ; Arghavani, Reza. / Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 162-164 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

@inproceedings{9ce47643dc7f42329b9060260549cb54,

title = "Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure",

abstract = "This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.",

keywords = "cobalt, contact plug, diffusion barrier layer, metal-oxide-semiconductor (MOS)",

author = "Maryamsadat Hosseini and Junichi Koike and Yuji Sutou and Larry Zhao and Steven Lai and Reza Arghavani",

year = "2016",

month = jul,

day = "8",

doi = "10.1109/IITC-AMC.2016.7507718",

language = "English",

series = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "162--164",

booktitle = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

note = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 ; Conference date: 23-05-2016 Through 26-05-2016",

}

TY - GEN

T1 - Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

AU - Hosseini, Maryamsadat

AU - Koike, Junichi

AU - Sutou, Yuji

AU - Zhao, Larry

AU - Lai, Steven

AU - Arghavani, Reza

PY - 2016/7/8

Y1 - 2016/7/8

N2 - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

AB - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

KW - cobalt

KW - contact plug

KW - diffusion barrier layer

KW - metal-oxide-semiconductor (MOS)

UR - http://www.scopus.com/inward/record.url?scp=84981298714&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981298714&partnerID=8YFLogxK

U2 - 10.1109/IITC-AMC.2016.7507718

DO - 10.1109/IITC-AMC.2016.7507718

M3 - Conference contribution

AN - SCOPUS:84981298714

T3 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

SP - 162

EP - 164

BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Y2 - 23 May 2016 through 26 May 2016

ER -