Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

Maryamsadat Hosseini; Junichi Koike; Yuji Sutou; Larry Zhao; Steven Lai; Reza Arghavani

doi:10.1109/IITC-AMC.2016.7507718

Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

Maryamsadat Hosseini, Junichi Koike, Yuji Sutou, Larry Zhao, Steven Lai, Reza Arghavani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

Original language	English
Title of host publication	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	162-164
Number of pages	3
ISBN (Electronic)	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507718
Publication status	Published - 2016 Jul 8
Externally published	Yes
Event	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 2016 May 23 → 2016 May 26

Publication series

Name	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country/Territory	United States
City	San Jose
Period	16/5/23 → 16/5/26

Keywords

cobalt
contact plug
diffusion barrier layer
metal-oxide-semiconductor (MOS)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films

Access to Document

10.1109/IITC-AMC.2016.7507718

Cite this

Hosseini, M., Koike, J., Sutou, Y., Zhao, L., Lai, S., & Arghavani, R. (2016). Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 162-164). [7507718] (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507718

Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. / Hosseini, Maryamsadat; Koike, Junichi ; Sutou, Yuji; Zhao, Larry; Lai, Steven; Arghavani, Reza.

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 162-164 7507718 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hosseini, M, Koike, J , Sutou, Y, Zhao, L, Lai, S & Arghavani, R 2016, Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507718, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 162-164, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 16/5/23. https://doi.org/10.1109/IITC-AMC.2016.7507718

Hosseini M, Koike J , Sutou Y, Zhao L, Lai S, Arghavani R. Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 162-164. 7507718. (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). https://doi.org/10.1109/IITC-AMC.2016.7507718

Hosseini, Maryamsadat ; Koike, Junichi ; Sutou, Yuji ; Zhao, Larry ; Lai, Steven ; Arghavani, Reza. / Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 162-164 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

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abstract = "This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.",

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AU - Hosseini, Maryamsadat

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AU - Lai, Steven

AU - Arghavani, Reza

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N2 - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

AB - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

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Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

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Keywords

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