TY - GEN
T1 - Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure
AU - Hosseini, Maryamsadat
AU - Koike, Junichi
AU - Sutou, Yuji
AU - Zhao, Larry
AU - Lai, Steven
AU - Arghavani, Reza
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/8
Y1 - 2016/7/8
N2 - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.
AB - This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.
KW - cobalt
KW - contact plug
KW - diffusion barrier layer
KW - metal-oxide-semiconductor (MOS)
UR - http://www.scopus.com/inward/record.url?scp=84981298714&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84981298714&partnerID=8YFLogxK
U2 - 10.1109/IITC-AMC.2016.7507718
DO - 10.1109/IITC-AMC.2016.7507718
M3 - Conference contribution
AN - SCOPUS:84981298714
T3 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
SP - 162
EP - 164
BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Y2 - 23 May 2016 through 26 May 2016
ER -