Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure

Maryamsadat Hosseini, Junichi Koike, Yuji Sutou, Larry Zhao, Steven Lai, Reza Arghavani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

This paper reports a new local interconnect structure using Co M0/contact and a Co-Ti amorphous single layer barrier. Good adhesion and low film resistivity were obtained for as-deposited and annealed samples. The metal-oxide-semiconductor samples of Co/Co-Ti/SiO2/p-Si showed a high breakdown voltage and no negative shift of flat band voltage after annealing up to 700 °C for 10 min. The amorphous structure of the Co-Ti layer was maintained throughout annealing and prevented Co diffusion into dielectric. The obtained results indicated that Co-Ti could be a potential candidate to replace conventional local interconnect structure of Ti/TiN.

Original languageEnglish
Title of host publication2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages162-164
Number of pages3
ISBN (Electronic)9781509003860
DOIs
Publication statusPublished - 2016 Jul 8
Event2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
Duration: 2016 May 232016 May 26

Publication series

Name2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
CountryUnited States
CitySan Jose
Period16/5/2316/5/26

Keywords

  • cobalt
  • contact plug
  • diffusion barrier layer
  • metal-oxide-semiconductor (MOS)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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  • Cite this

    Hosseini, M., Koike, J., Sutou, Y., Zhao, L., Lai, S., & Arghavani, R. (2016). Amorphous Co-Ti alloy as a single layer barrier for Co local interconnect structure. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (pp. 162-164). [7507718] (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507718