TY - JOUR
T1 - Ammonothermal growth of GaN on a self-nucleated GaN seed crystal
AU - Bao, Quanxi
AU - Saito, Makoto
AU - Hazu, Kouji
AU - Kagamitani, Yuji
AU - Kurimoto, Kouhei
AU - Tomida, Daisuke
AU - Qiao, Kun
AU - Ishiguro, Tohru
AU - Yokoyama, Chiaki
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
This work was supported in part by New Energy and Industrial Technology Development Organization programs by the Ministry of Economy, Trade, and Industry, Japan.
Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014
Y1 - 2014
N2 - We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.
AB - We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.
KW - Ammonothermal method
KW - B1. GaN
KW - NHF
KW - Self-nucleated seed
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U2 - 10.1016/j.jcrysgro.2014.06.052
DO - 10.1016/j.jcrysgro.2014.06.052
M3 - Article
AN - SCOPUS:84905369188
VL - 404
SP - 168
EP - 171
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -