Ammonothermal growth of GaN on a self-nucleated GaN seed crystal

Quanxi Bao, Makoto Saito, Kouji Hazu, Yuji Kagamitani, Kouhei Kurimoto, Daisuke Tomida, Kun Qiao, Tohru Ishiguro, Chiaki Yokoyama, Shigefusa F. Chichibu

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9 Citations (Scopus)

Abstract

We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.

Original languageEnglish
Pages (from-to)168-171
Number of pages4
JournalJournal of Crystal Growth
Volume404
DOIs
Publication statusPublished - 2014 Jan 1

Keywords

  • Ammonothermal method
  • B1. GaN
  • NHF
  • Self-nucleated seed

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Bao, Q., Saito, M., Hazu, K., Kagamitani, Y., Kurimoto, K., Tomida, D., Qiao, K., Ishiguro, T., Yokoyama, C., & Chichibu, S. F. (2014). Ammonothermal growth of GaN on a self-nucleated GaN seed crystal. Journal of Crystal Growth, 404, 168-171. https://doi.org/10.1016/j.jcrysgro.2014.06.052