Ammonothermal growth of GaN on a self-nucleated GaN seed crystal

Quanxi Bao; Makoto Saito; Kouji Hazu; Yuji Kagamitani; Kouhei Kurimoto; Daisuke Tomida; Kun Qiao; Tohru Ishiguro; Chiaki Yokoyama; Shigefusa F. Chichibu

doi:10.1016/j.jcrysgro.2014.06.052

Ammonothermal growth of GaN on a self-nucleated GaN seed crystal

Quanxi Bao, Makoto Saito, Kouji Hazu, Yuji Kagamitani, Kouhei Kurimoto, Daisuke Tomida, Kun Qiao, Tohru Ishiguro, Chiaki Yokoyama, Shigefusa F. Chichibu

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH₄F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.

Original language	English
Pages (from-to)	168-171
Number of pages	4
Journal	Journal of Crystal Growth
Volume	404
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.06.052
Publication status	Published - 2014 Jan 1

Keywords

Ammonothermal method
B1. GaN
NHF
Self-nucleated seed

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2014.06.052

Fingerprint Dive into the research topics of 'Ammonothermal growth of GaN on a self-nucleated GaN seed crystal'. Together they form a unique fingerprint.

Cite this

Bao, Q., Saito, M., Hazu, K., Kagamitani, Y., Kurimoto, K., Tomida, D., Qiao, K., Ishiguro, T., Yokoyama, C., & Chichibu, S. F. (2014). Ammonothermal growth of GaN on a self-nucleated GaN seed crystal. Journal of Crystal Growth, 404, 168-171. https://doi.org/10.1016/j.jcrysgro.2014.06.052

@article{620ba3ba18f041128491f7fa7b9dc122,

title = "Ammonothermal growth of GaN on a self-nucleated GaN seed crystal",

abstract = "We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.",

keywords = "Ammonothermal method, B1. GaN, NHF, Self-nucleated seed",

author = "Quanxi Bao and Makoto Saito and Kouji Hazu and Yuji Kagamitani and Kouhei Kurimoto and Daisuke Tomida and Kun Qiao and Tohru Ishiguro and Chiaki Yokoyama and Chichibu, {Shigefusa F.}",

year = "2014",

month = jan,

day = "1",

doi = "10.1016/j.jcrysgro.2014.06.052",

language = "English",

volume = "404",

pages = "168--171",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Ammonothermal growth of GaN on a self-nucleated GaN seed crystal

AU - Bao, Quanxi

AU - Saito, Makoto

AU - Hazu, Kouji

AU - Kagamitani, Yuji

AU - Kurimoto, Kouhei

AU - Tomida, Daisuke

AU - Qiao, Kun

AU - Ishiguro, Tohru

AU - Yokoyama, Chiaki

AU - Chichibu, Shigefusa F.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.

AB - We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.

KW - Ammonothermal method

KW - B1. GaN

KW - NHF

KW - Self-nucleated seed

UR - http://www.scopus.com/inward/record.url?scp=84905369188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905369188&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.06.052

DO - 10.1016/j.jcrysgro.2014.06.052

M3 - Article

AN - SCOPUS:84905369188

VL - 404

SP - 168

EP - 171

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -