Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave

Daisuke Tomida, Quanxi Bao, Makoto Saito, Ryu Osanai, Kohei Shima, Kazunobu Kojima, Tohru Ishiguro, Shigefusa F. Chichibu

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5 Citations (Scopus)


Seeded ammonothermal growths of a few-mm-thick GaN crystals on a 2 inch diameter c-plane and a 45 mm long m-plane GaN wafers were carried out by using an NH4F mineralizer in a 60 mm diameter Ag-lined autoclave. As a result of dynamic control of the temperature profile, low dislocation density and nearly bowing-free m-plane GaN was grown: I.e. the full-width at half-maximum values for the X-ray rocking curves of the 10 2 reflections were smaller than 28 arcsec and the radius of curvature was estimated to be 1460 m. In addition, its low temperature photoluminescence spectrum exhibited free and neutral donor-bound exciton emission peaks.

Original languageEnglish
Article number055505
JournalApplied Physics Express
Issue number5
Publication statusPublished - 2020 May 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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