Ammonothermal crystal growth of GaN using an NH4F mineralizer

Quanxi Bao, Makoto Saito, Kouji Hazu, Kentaro Furusawa, Yuji Kagamitani, Rinzo Kayano, Daisuke Tomida, Kun Qiao, Tohru Ishiguro, Chiaki Yokoyama, Shigefusa F. Chichibu

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.

Original languageEnglish
Pages (from-to)4158-4161
Number of pages4
JournalCrystal Growth and Design
Volume13
Issue number10
DOIs
Publication statusPublished - 2013 Oct 2

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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    Bao, Q., Saito, M., Hazu, K., Furusawa, K., Kagamitani, Y., Kayano, R., Tomida, D., Qiao, K., Ishiguro, T., Yokoyama, C., & Chichibu, S. F. (2013). Ammonothermal crystal growth of GaN using an NH4F mineralizer. Crystal Growth and Design, 13(10), 4158-4161. https://doi.org/10.1021/cg4007907