Ammonothermal crystal growth of GaN using an NH4F mineralizer

Quanxi Bao; Makoto Saito; Kouji Hazu; Kentaro Furusawa; Yuji Kagamitani; Rinzo Kayano; Daisuke Tomida; Kun Qiao; Tohru Ishiguro; Chiaki Yokoyama; Shigefusa F. Chichibu

doi:10.1021/cg4007907

Ammonothermal crystal growth of GaN using an NH₄F mineralizer

Quanxi Bao, Makoto Saito, Kouji Hazu, Kentaro Furusawa, Yuji Kagamitani, Rinzo Kayano, Daisuke Tomida, Kun Qiao, Tohru Ishiguro, Chiaki Yokoyama, Shigefusa F. Chichibu

Research output: Contribution to journal › Article

36 Citations (Scopus)

Abstract

NH₄F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH₄Cl, NH₄Br, and NH₄I, NH₄F behaves distinctively different. First, NH₄F affords a negative temperature gradient for crystal growth of GaN in supercritical NH₃ at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH₄F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH₄F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.

Original language	English
Pages (from-to)	4158-4161
Number of pages	4
Journal	Crystal Growth and Design
Volume	13
Issue number	10
DOIs	https://doi.org/10.1021/cg4007907
Publication status	Published - 2013 Oct 2

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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Bao, Q., Saito, M., Hazu, K., Furusawa, K., Kagamitani, Y., Kayano, R., Tomida, D., Qiao, K., Ishiguro, T., Yokoyama, C., & Chichibu, S. F. (2013). Ammonothermal crystal growth of GaN using an NH₄F mineralizer. Crystal Growth and Design, 13(10), 4158-4161. https://doi.org/10.1021/cg4007907

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title = "Ammonothermal crystal growth of GaN using an NH4F mineralizer",

abstract = "NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.",

author = "Quanxi Bao and Makoto Saito and Kouji Hazu and Kentaro Furusawa and Yuji Kagamitani and Rinzo Kayano and Daisuke Tomida and Kun Qiao and Tohru Ishiguro and Chiaki Yokoyama and Chichibu, {Shigefusa F.}",

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T1 - Ammonothermal crystal growth of GaN using an NH4F mineralizer

AU - Bao, Quanxi

AU - Saito, Makoto

AU - Hazu, Kouji

AU - Furusawa, Kentaro

AU - Kagamitani, Yuji

AU - Kayano, Rinzo

AU - Tomida, Daisuke

AU - Qiao, Kun

AU - Ishiguro, Tohru

AU - Yokoyama, Chiaki

AU - Chichibu, Shigefusa F.

PY - 2013/10/2

Y1 - 2013/10/2

N2 - NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.

AB - NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.

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