TY - JOUR
T1 - Ammonothermal crystal growth of GaN using an NH4F mineralizer
AU - Bao, Quanxi
AU - Saito, Makoto
AU - Hazu, Kouji
AU - Furusawa, Kentaro
AU - Kagamitani, Yuji
AU - Kayano, Rinzo
AU - Tomida, Daisuke
AU - Qiao, Kun
AU - Ishiguro, Tohru
AU - Yokoyama, Chiaki
AU - Chichibu, Shigefusa F.
PY - 2013/10/2
Y1 - 2013/10/2
N2 - NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.
AB - NH4F is demonstrated to be a promising mineralizer for the acidic ammonothermal crystal growth of GaN. In comparison with other acidic mineralizers such as NH4Cl, NH4Br, and NH4I, NH4F behaves distinctively different. First, NH4F affords a negative temperature gradient for crystal growth of GaN in supercritical NH3 at a temperature range from 550 to 650 C. Second, it enables GaN crystal growth in polar (c plane), semipolar, and nonpolar directions (a plane and m plane). Third, NH4F remarkably increases both the growth rate and quality of the GaN crystal. With the aid of NH4F, self-nucleation of GaN and bulk growth of hexagonal GaN crystals from the self-nucleated seed have been realized.
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U2 - 10.1021/cg4007907
DO - 10.1021/cg4007907
M3 - Article
AN - SCOPUS:84885125419
VL - 13
SP - 4158
EP - 4161
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 10
ER -