Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

M. Matsumoto; Y. Inayoshi; S. Murashige; M. Suemitsu; S. Nakajima; T. Uehara; Y. Toyoshima

doi:10.1116/1.3021039

Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, S. Murashige, M. Suemitsu, S. Nakajima, T. Uehara, Y. Toyoshima

Information Devices Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).

Original language	English
Pages (from-to)	223-225
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3021039
Publication status	Published - 2009 Feb 17

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Matsumoto, M., Inayoshi, Y., Murashige, S., Suemitsu, M., Nakajima, S., Uehara, T., & Toyoshima, Y. (2009). Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 223-225. https://doi.org/10.1116/1.3021039

Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure. / Matsumoto, M.; Inayoshi, Y.; Murashige, S.; Suemitsu, M.; Nakajima, S.; Uehara, T.; Toyoshima, Y.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 17.02.2009, p. 223-225.

Research output: Contribution to journal › Article › peer-review

Matsumoto, M, Inayoshi, Y, Murashige, S, Suemitsu, M, Nakajima, S, Uehara, T & Toyoshima, Y 2009, 'Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 223-225. https://doi.org/10.1116/1.3021039

@article{4c0a54e21a8149889af76c3f466a456f,

title = "Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure",

abstract = "Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).",

author = "M. Matsumoto and Y. Inayoshi and S. Murashige and M. Suemitsu and S. Nakajima and T. Uehara and Y. Toyoshima",

year = "2009",

month = feb,

day = "17",

doi = "10.1116/1.3021039",

language = "English",

volume = "27",

pages = "223--225",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "1",

}

TY - JOUR

T1 - Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

AU - Matsumoto, M.

AU - Inayoshi, Y.

AU - Murashige, S.

AU - Suemitsu, M.

AU - Nakajima, S.

AU - Uehara, T.

AU - Toyoshima, Y.

PY - 2009/2/17

Y1 - 2009/2/17

N2 - Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).

AB - Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).

UR - http://www.scopus.com/inward/record.url?scp=59949089654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59949089654&partnerID=8YFLogxK

U2 - 10.1116/1.3021039

DO - 10.1116/1.3021039

M3 - Article

AN - SCOPUS:59949089654

VL - 27

SP - 223

EP - 225

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 1

ER -