TY - JOUR
T1 - Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure
AU - Matsumoto, M.
AU - Inayoshi, Y.
AU - Murashige, S.
AU - Suemitsu, M.
AU - Nakajima, S.
AU - Uehara, T.
AU - Toyoshima, Y.
N1 - Funding Information:
This research has been supported by the Japan Science and Technology Agency and the Tohoku University Global COE program “Center of Education and Research for Information Electronics Systems.”
PY - 2009
Y1 - 2009
N2 - Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).
AB - Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).
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U2 - 10.1116/1.3021039
DO - 10.1116/1.3021039
M3 - Article
AN - SCOPUS:59949089654
VL - 27
SP - 223
EP - 225
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -