Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, S. Murashige, M. Suemitsu, S. Nakajima, T. Uehara, Y. Toyoshima

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Ammonia-free deposition of silicon nitride (Si NX) films have been achieved on Si(100) substrate at low temperature (200 °C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stable discharge of a Si H4 - H2 - N2 system at near atmospheric pressures without using any inert gases such as He. Characterization by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy indicates that the grown film is a Si Nx film with its NSi ratio varying for 0.85-0.90, depending on the N2 Si H4 flow ratio (1000-4000). Despite the use of N2 instead of N H3, a high rate growth (10-70 nmmin) is enabled, which would be beneficial in forming protection/passivation layers in solar cells. The breakdown field of 7.4 MVcm seems also promising for its use as a gate insulator in amorphous-silicon-based thin film transistors (TFTs).

Original languageEnglish
Pages (from-to)223-225
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number1
DOIs
Publication statusPublished - 2009 Feb 17

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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