Ambipolar Photocarrier Doping and Transport in Monolayer WS by Forming a Graphene/WS/Quantum Dots Heterostructure

Guanghui Cheng, Baikui Li, Chunyu Zhao, Zijing Jin, Kei May Lau, Jiannong Wang

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we demonstrated that {p} -type and {n} -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping.

Original languageEnglish
Article number9321548
Pages (from-to)371-374
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number3
DOIs
Publication statusPublished - 2021 Mar
Externally publishedYes

Keywords

  • TMDCs
  • WS₂
  • photocarrier doping
  • photocurrent mapping
  • vdW heterostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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