@article{f6981ff2c8e146e0b203ef3011d3d4d7,
title = "Ambipolar Photocarrier Doping and Transport in Monolayer WS by Forming a Graphene/WS/Quantum Dots Heterostructure",
abstract = "In this work, we demonstrated that {p} -type and {n} -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping. ",
keywords = "TMDCs, WS₂, photocarrier doping, photocurrent mapping, vdW heterostructure",
author = "Guanghui Cheng and Baikui Li and Chunyu Zhao and Zijing Jin and Lau, {Kei May} and Jiannong Wang",
note = "Funding Information: Manuscript received December 1, 2020; accepted January 10, 2021. Date of publication January 13, 2021; date of current version February 24, 2021. This work was supported in part by the Research Council of the Hong Kong SAR under Grant 16307019, Grant C7036-17W-1, and Grant C6013-16E; in part by the National Natural Science Foundation of China under Grant 62074103 and Grant 61604098; and in part by the Shenzhen Science and Technology Innovation Commission under Grant JCYJ20170412110137562. The review of this letter was arranged by Editor S. J. Koester. (Corresponding authors: Baikui Li; Jiannong Wang.) Guanghui Cheng, Zijing Jin, and Jiannong Wang are with the Physics Department, The Hong Kong University of Science and Technology, Hong Kong (e-mail: phjwang@ust.hk). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2021",
month = mar,
doi = "10.1109/LED.2021.3051304",
language = "English",
volume = "42",
pages = "371--374",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}