Ambipolar MoTe2 transistors and their applications in logic circuits

Yen Fu Lin, Yong Xu, Sheng Tsung Wang, Song Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

287 Citations (Scopus)

Abstract

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V bg) and drain-source voltage (V ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.

Original languageEnglish
Pages (from-to)3263-3269
Number of pages7
JournalAdvanced Materials
Volume26
Issue number20
DOIs
Publication statusPublished - 2014 May 28
Externally publishedYes

Keywords

  • ambipolar transistors
  • electronics
  • Schottky barriers
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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