Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching

Motoaki Hara; J. Kuypers; T. Abe; Masayoshi Esashi

doi:10.1109/SENSOR.2003.1217131

Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching

Motoaki Hara, J. Kuypers, T. Abe, Masayoshi Esashi

Micro System Integration Center (μSIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We report the development of aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR). This resonator has an air gap beneath the resonator to obtain high Q factor and low spurious response. Germanium (Ge) was used as a sacrificial layer for the air gap. This technique gives very simple process and high CMOS compatibility. The FBAR was evaluated about the effect of the air gap and the electrode size. The FBAR achieved a resonant frequency of 2 GHz, a Q factor of 780 and an effective electro-mechanical coupling constant (k_eff²) of 5.36%.

Original language	English
Title of host publication	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1780-1783
Number of pages	4
ISBN (Electronic)	0780377311, 9780780377318
DOIs	https://doi.org/10.1109/SENSOR.2003.1217131
Publication status	Published - 2003 Jan 1
Event	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States Duration: 2003 Jun 8 → 2003 Jun 12

Publication series

Name	TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume	2

Other

Other	12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
Country	United States
City	Boston
Period	03/6/8 → 03/6/12

Keywords

Aluminum nitride
CMOS process
Electrodes
Etching
Film bulk acoustic resonators
Germanium
Piezoelectric films
Q factor
Substrates
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2003.1217131

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Hara, M., Kuypers, J., Abe, T., & Esashi, M. (2003). Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (pp. 1780-1783). [1217131] (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1217131

Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. / Hara, Motoaki; Kuypers, J.; Abe, T.; Esashi, Masayoshi.

TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2003. p. 1780-1783 1217131 (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hara, M, Kuypers, J, Abe, T & Esashi, M 2003, Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. in TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers., 1217131, TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 1780-1783, 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers, Boston, United States, 03/6/8. https://doi.org/10.1109/SENSOR.2003.1217131

Hara M, Kuypers J, Abe T, Esashi M. Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2003. p. 1780-1783. 1217131. (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers). https://doi.org/10.1109/SENSOR.2003.1217131

Hara, Motoaki ; Kuypers, J. ; Abe, T. ; Esashi, Masayoshi. / Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 1780-1783 (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers).

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