@inproceedings{fb2c1c5a3a6e40a0afb616e2bb2043ec,
title = "Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching",
abstract = "We report the development of aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR). This resonator has an air gap beneath the resonator to obtain high Q factor and low spurious response. Germanium (Ge) was used as a sacrificial layer for the air gap. This technique gives very simple process and high CMOS compatibility. The FBAR was evaluated about the effect of the air gap and the electrode size. The FBAR achieved a resonant frequency of 2 GHz, a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36%.",
keywords = "Aluminum nitride, CMOS process, Electrodes, Etching, Film bulk acoustic resonators, Germanium, Piezoelectric films, Q factor, Substrates, Transistors",
author = "Motoaki Hara and J. Kuypers and T. Abe and Masayoshi Esashi",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/SENSOR.2003.1217131",
language = "English",
series = "TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1780--1783",
booktitle = "TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers",
note = "12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers ; Conference date: 08-06-2003 Through 12-06-2003",
}