Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching

Motoaki Hara, J. Kuypers, T. Abe, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report the development of aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR). This resonator has an air gap beneath the resonator to obtain high Q factor and low spurious response. Germanium (Ge) was used as a sacrificial layer for the air gap. This technique gives very simple process and high CMOS compatibility. The FBAR was evaluated about the effect of the air gap and the electrode size. The FBAR achieved a resonant frequency of 2 GHz, a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36%.

Original languageEnglish
Title of host publicationTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1780-1783
Number of pages4
ISBN (Electronic)0780377311, 9780780377318
DOIs
Publication statusPublished - 2003 Jan 1
Event12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
Duration: 2003 Jun 82003 Jun 12

Publication series

NameTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
Volume2

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
CountryUnited States
CityBoston
Period03/6/803/6/12

Keywords

  • Aluminum nitride
  • CMOS process
  • Electrodes
  • Etching
  • Film bulk acoustic resonators
  • Germanium
  • Piezoelectric films
  • Q factor
  • Substrates
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Hara, M., Kuypers, J., Abe, T., & Esashi, M. (2003). Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching. In TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers (pp. 1780-1783). [1217131] (TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SENSOR.2003.1217131