TY - GEN
T1 - Al2O3/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC`S.
AU - Sawada, Takayuki
AU - Hasegawa, Hideki
AU - Ohno, Hideo
AU - Itagaki, Shin
PY - 1984
Y1 - 1984
N2 - InP MISFETs with Al//2O//3/native oxide double-layer gate insulators grown by simple anodization processes in electrolyte and in oxygen plasma have been investigated. Device performance was greatly improved by adding thin native oxide intermediate layer, showing effective electron mobilities of 1500-3000 cm**2/V. s with marked reduction of the current instability. A mechanism of the current drift was proposed, concerning to usual interface states below semiconductor conduction band edge. Feasibility of the double-layer gate MISFET ICs was also demonstrated by E/D inverters and ring oscillators.
AB - InP MISFETs with Al//2O//3/native oxide double-layer gate insulators grown by simple anodization processes in electrolyte and in oxygen plasma have been investigated. Device performance was greatly improved by adding thin native oxide intermediate layer, showing effective electron mobilities of 1500-3000 cm**2/V. s with marked reduction of the current instability. A mechanism of the current drift was proposed, concerning to usual interface states below semiconductor conduction band edge. Feasibility of the double-layer gate MISFET ICs was also demonstrated by E/D inverters and ring oscillators.
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U2 - 10.7567/ssdm.1984.c-5-3
DO - 10.7567/ssdm.1984.c-5-3
M3 - Conference contribution
AN - SCOPUS:0021603589
SN - 4930813077
SN - 9784930813077
T3 - Conference on Solid State Devices and Materials
SP - 367
EP - 370
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -