Al2O3/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC`S.

Takayuki Sawada; Hideki Hasegawa; Hideo Ohno; Shin Itagaki

doi:10.7567/ssdm.1984.c-5-3

Al₂O₃/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC`S.

Takayuki Sawada, Hideki Hasegawa, Hideo Ohno, Shin Itagaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

InP MISFETs with Al//2O//3/native oxide double-layer gate insulators grown by simple anodization processes in electrolyte and in oxygen plasma have been investigated. Device performance was greatly improved by adding thin native oxide intermediate layer, showing effective electron mobilities of 1500-3000 cm**2/V. s with marked reduction of the current instability. A mechanism of the current drift was proposed, concerning to usual interface states below semiconductor conduction band edge. Feasibility of the double-layer gate MISFET ICs was also demonstrated by E/D inverters and ring oscillators.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Business Cent for Academic Soc Japan
Pages	367-370
Number of pages	4
ISBN (Print)	4930813077, 9784930813077
DOIs	https://doi.org/10.7567/ssdm.1984.c-5-3
Publication status	Published - 1984
Externally published	Yes

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.7567/ssdm.1984.c-5-3

Cite this

Al₂O₃/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC`S. / Sawada, Takayuki; Hasegawa, Hideki; Ohno, Hideo; Itagaki, Shin.

Conference on Solid State Devices and Materials. Business Cent for Academic Soc Japan, 1984. p. 367-370 (Conference on Solid State Devices and Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Itagaki, Shin

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Y1 - 1984

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AB - InP MISFETs with Al//2O//3/native oxide double-layer gate insulators grown by simple anodization processes in electrolyte and in oxygen plasma have been investigated. Device performance was greatly improved by adding thin native oxide intermediate layer, showing effective electron mobilities of 1500-3000 cm**2/V. s with marked reduction of the current instability. A mechanism of the current drift was proposed, concerning to usual interface states below semiconductor conduction band edge. Feasibility of the double-layer gate MISFET ICs was also demonstrated by E/D inverters and ring oscillators.

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