AlSb–GaSb and AlAs–GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy

Yoshiro Hirayama, Yutaka Ohmori, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this paper we report the synthesis and properties of AlSb–GaSb and AlAs–GaAs monolayer superlattices grown by molecular beam epitaxy. The ordering in the monolayer superlattices is confirmed by an X-ray diffraction technique. The photoluminescence intensity from monolayer superlattice is stronger than that from mixed crystals with the same Al molar odicity in structure of ML-SL is confirmed by X-ray.

Original languageEnglish
Pages (from-to)L488-L489
JournalJapanese journal of applied physics
Volume23
Issue number7
DOIs
Publication statusPublished - 1984 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'AlSb–GaSb and AlAs–GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy'. Together they form a unique fingerprint.

Cite this