AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN

T. Mitsunari, Tomoyuki Tanikawa, Y. Honda, M. Yamaguchi, H. Amano

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report the fabrication of a four-period AlN/air distributed Bragg reflector (DBR) by in-situ GaN sublimation from microcracks of AlN. The GaN/AlN multilayer structure was grown on a stripepatterned and dot-patterned Si substrate, and subsequently annealed at 1200°C in H2 and NH 3 atmosphere. Microcracks were observed on the surface and side face of the A1N/air DBRs. We achieved an AlN/air structure by the decomposition of GaN from the microcracks of AlN. Partially crack-free AlN layers were observed over a 5 x 5 μm area in the c-plane of AlN/air DBRs. The root mean square (RMS) values of the surface and back surface of stripe-patterned AlN/air DBRs were 0.94 and 3.3 nm, respectively. The relative reflectivity was measured using a He-Cd laser (442 nm). In some areas, stripe-patterned and dot-patterned AlN/air DBRs showed a high reflectivity of 83.7% and 90.7%, respectively, at the wavelength of 442 nm.

Original languageEnglish
Pages (from-to)16-21
Number of pages6
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1

Keywords

  • A3. Metalorganic vapor phase epitaxy
  • A3. Selective epitaxy
  • B1. Nitrides
  • B3. DBRs

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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