AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

Yosuke Tamura, Kazuhiro Hane

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60–120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

Original languageEnglish
Article number460
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2015 Dec 1

Keywords

  • AlN
  • Epitaxial growth
  • MBE
  • Nanostructure
  • Nanowall
  • Si substrate
  • XRD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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