AlN formation by an Al/GaN substitution reaction

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Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution method we propose here consists of an Al deposition process on a GaN substrate by a sputtering technique and heat treatment process. The substitution reaction (Al + GaN = AlN + Ga) is proceeded by heat treatment of the Al/GaN sample, which provides a low temperature, simple and easy process. C-axis-oriented AlN layers are formed at the Al/GaN interface after heat treatment of the Al/GaN samples at some conditions of 1473–1573 K for 0–3 h. A longer holding time leads to an increase in the thickness of the AlN layer. The growth rate of the AlN layer is controlled by the interdiffusion in the AlN layer.

Original languageEnglish
Article number13058
JournalScientific reports
Issue number1
Publication statusPublished - 2020 Dec 1

ASJC Scopus subject areas

  • General


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