AlN epitaxial film with atomically flat surface for GHz-band saw devices

K. Uehara; C. M. Yang; H. Nakamura; Suguru Kameda; H. Nakase; K. Tsubouchi

AlN epitaxial film with atomically flat surface for GHz-band saw devices

K. Uehara, C. M. Yang, H. Nakamura, Suguru Kameda, H. Nakase, K. Tsubouchi

ENG - Institute of Engineering Education

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H₂ gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al₂O₃ combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al₂O₃ combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

Original language	English
Pages (from-to)	135-138
Number of pages	4
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	1
Publication status	Published - 2002
Event	2002 IEEE Ultrasonics Symposium - Munich, Germany Duration: 2002 Oct 8 → 2002 Oct 11

ASJC Scopus subject areas

Acoustics and Ultrasonics

Cite this

@article{6ed427fc7c974e81aacc71da01926a8a,

title = "AlN epitaxial film with atomically flat surface for GHz-band saw devices",

abstract = "We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2{\AA}, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.",

author = "K. Uehara and Yang, {C. M.} and H. Nakamura and Suguru Kameda and H. Nakase and K. Tsubouchi",

year = "2002",

language = "English",

volume = "1",

pages = "135--138",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE Ultrasonics Symposium ; Conference date: 08-10-2002 Through 11-10-2002",

}

TY - JOUR

T1 - AlN epitaxial film with atomically flat surface for GHz-band saw devices

AU - Uehara, K.

AU - Yang, C. M.

AU - Nakamura, H.

AU - Kameda, Suguru

AU - Nakase, H.

AU - Tsubouchi, K.

PY - 2002

Y1 - 2002

N2 - We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

AB - We have successfully developed (00·1) AlN film with atomically flat surface on (00·1) sapphire substrate using metalorganic chemical vapor deposition (MO-CVD) method. The atomically flat surface of less than Ra=2Å, Ra means mean roughness measured by atomic force microscope(AFM), within the thickness of 1.7μm has been achieved, whose conditions are high substrate temperature of 1200°C, low pressure of 30Torr, low V-III ratio of 500 and the numerous flow rate of trimethylaluminum (TMA)-back-up H2 gas of 5.0slm. The temperature-coefficient-of-delay (TCD) of the fabricated surface-acoustic-wave (SAW) device on (00·1) AlN/(00·1)Al2O3 combination with atomically flat surface are found to be 44.5ppm/°C at kH=2.25 and 28.5ppm/°C at kH=3.32, where kH is the normalized thickness by wave number, k is wave number and H is AlN film thickness. These measured TCD are agreed with simulated curve. AlN/Al2O3 combination with atomically flat surface has a potential for zero-TCD at kH=4.5.

UR - http://www.scopus.com/inward/record.url?scp=0036992729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036992729&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036992729

VL - 1

SP - 135

EP - 138

JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

SN - 1051-0117

T2 - 2002 IEEE Ultrasonics Symposium

Y2 - 8 October 2002 through 11 October 2002

ER -

AlN epitaxial film with atomically flat surface for GHz-band saw devices

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this