AlN: A hexagonal-nitride seed layer underneath Ru for granular-type perpendicular magnetic recording media

Shinichi Ishibashi, Shin Saito, Atsushi Hashimoto, Migaku Takahashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A new hexagonal-nitride material, AlN, is proposed in place of current metallic materials as a seed layer underneath the Ru layer for perpendicular recording media. It was found that (1) c-plane oriented AlN with wurtzite structure can be realized by direct current reactive sputtering, (2) c axis direction distribution (FWHM) of AlN decreases with the change in buffer structure from nano-crystalline to amorphous, which also results in reduction of the FWHM of Ru, (3) a Ru layer with low averaged grain size less than 8.0 nm retains low FWHM at less than 4.0°, and surface roughness with peak to valley of 2.0 nm is available by insertion of the AlN seed layer, (4) for substrate/FeCoB buffer (10 nm)/AlN/Ru/CoPtCr-SiO2 (16 nm) media, an increase in the thickness of the AlN layer is also effective for magnetic isolation of granular-type media, in addition to a decrease in the Ru layer thickness, which means that the AlN layer can substitute a part of the Ru layer.

Original languageEnglish
Pages (from-to)3511-3514
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
Publication statusPublished - 2008 Nov

Keywords

  • Bumped topological surface
  • Hexagonal-nitride aln
  • Highly c axis orientation
  • Seed layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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